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| Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors DESCRIPTION With TO-220C package DARLINGTON High DC current gain Low collector saturation voltage Complement to type TIP110/111/112 APPLICATIONS For industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP115/116/117 Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO IN PARAMETER Collector-base voltage CHA E SEM NG TIP115 TIP116 TIP117 TIP115 TIP116 TIP117 Open base Open emitter OND IC CONDITIONS TOR UC VALUE -60 -80 -100 -60 -80 -100 UNIT V VCEO Collector-emitter voltage V VEBO IC ICM IB PC Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC Open collector --5 -2 -4 50 V A A mA TC=25ae Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 50 W 2 150 -65~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER TIP115 VCEO(SUS) Collector-emitter sustaining voltage TIP116 TIP117 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage TIP115 ICBO Collector cut-off current TIP116 TIP117 IC=-2A ,IB=-8mA IC=-2A ; VCE=-4V VCB=-60V, IE=0 VCB=-80V, IE=0 VCB=-100V, IE=0 VCE=-30V, IB=0 VCE=-40V, IB=0 VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-30mA, IB=0 CONDITIONS TIP115/116/117 SYMBOL MIN -60 -80 -100 TYP. MAX UNIT V -2.5 -2.8 V V -1 mA ICEO Collector cut-off current TIP115 TIP116 IEBO hFE-1 hFE-2 Cob CHA IN Emitter cut-off current DC current gain DC current gain Output capacitance E SEM NG TIP117 OND IC TOR UC -2 -2 mA mA IC=-1A ; VCE=-4V IC=-2A ; VCE=-4V IE=0 ; VCB=-10V,f=0.1MHz 1000 500 200 pF 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE TIP115/116/117 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP115/116/117 CHA IN E SEM NG OND IC TOR UC 4 |
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